Anais do Workshop INEO 2023

RESISTIVE SWITCHING AND ELECTRODE DEGRADATION IN ITO/POLYMER/AL DEVICE

Published in 12/12/2023 - ISBN: 978-65-272-0088-8

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Paper Title
RESISTIVE SWITCHING AND ELECTRODE DEGRADATION IN ITO/POLYMER/AL DEVICE
Authors
  • Guilherme Severino Mendes de Araújo
  • Marleane Maria Felix de Azevedo
  • Angel Alberto Hidalgo
  • Alexandre De Castro Maciel
  • Helder Nunes Da Cunha
  • Maria Leticia Vega
  • Cleânio da Luz Lima; UFPI
Modality
Pôster
Subject area
Dispositivos eletrônicos e ópticos (OLED/OFET/OPVs/etc.)
Publishing Date
12/12/2023
Country of Publishing
Brasil
Language of Publishing
Inglês
Paper Page
https://www.even3.com.br/anais/workshop-do-ineo-2023/613308-resistive-switching-and-electrode-degradation-in-itopolymeral-device
ISBN
978-65-272-0088-8
Keywords
resistive memories, resistive switching, compliance current (CC), degration
Summary
The technological revolution driven by the rapid growth of digital technology market has directed research into the development of new memory devices and data processors. Data from solid state drive (SSD) memory devices, hard disk (HD), social networks, cloud computing, smart devices based on the internet of things have deeply immersed man in the era of big data. With this, it is necessary to search for new materials and devices for application in memories. In this context, resistive memories or memristors have been gaining attention in recent years as alternative or supplementary devices for application in memory devices and data processors [1]. The basic characterization of these devices is current vs voltage (I-V). In general, resistive memories need electroforming to be characterized as memory. After this procedure, resistive memories store information through the change between low resistance states (LRS) and high resistance states (HRS) after an after applying an external electric field. Throughout the process, it is important to use a compliance current (CC) to avoid device degradation. In this work have been studied the effect of the CC of 5 mA, 8 mA and 10 mA for I-V measurement on the resistive switching of ITO/Polymer/Aluminum devices. The polymer used was Poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV). Cycle endurance tests were performed after each I-V measurement and show that the memory margin gradually decreases as the CC increases. Some devices had a hard breakdown with CC of 20 mA causing partial destruction of the device. This destruction may be associated with the formation of O2 bubbles at the polymer/ITO interface, or inside the polymeric layer, similar to the process reported by Ninõ et al[2] and Yang et al[3,4]. Acknowledgments: financial support from CNPq grant number 465572/2014-6), the São Paulo Research Foundation (FAPESP) (2014/50869-6), and CAPES (Education Ministry) (23038.000776/201754) via the projects of the National Institute for Science and Technology on Organic Electronics (INEO). Laboratory Facilities were also financed by FINEP and FAPESP. References [1] A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications, Small Struct. 2021, 2, 2000109. [2] Study of the presence of spherical deformations on the Al top electrode due to electroforming in rewritable organic resistive memories, Phys.Chem.Chem.Phys., 2017, 19, 25691 [3] Structural and chemical characterization of TiO2 memristive devices by spatially-resolved NEXAFS, Nanotechnology 20 (2009) 485701. [4] Conductive Atomic Force Microscopy Investigation of Switching Thresholds in Titanium Dioxide Thin Films, J. Phys. Chem. C 2015, 119, 11958-11964.
Title of the Event
Workshop do INEO 2023
City of the Event
Nazaré Paulista
Title of the Proceedings of the event
Anais do Workshop INEO 2023
Name of the Publisher
Even3
Means of Dissemination
Meio Digital

How to cite

ARAÚJO, Guilherme Severino Mendes de et al.. RESISTIVE SWITCHING AND ELECTRODE DEGRADATION IN ITO/POLYMER/AL DEVICE.. In: Anais do workshop INEO 2023. Anais...Nazaré Paulista(SP) Hotel Estância Atibainha, 2023. Available in: https//www.even3.com.br/anais/workshop-do-ineo-2023/613308-RESISTIVE-SWITCHING-AND-ELECTRODE-DEGRADATION-IN-ITOPOLYMERAL-DEVICE. Access in: 22/12/2024

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